25 July 2013 Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020O (2013) https://doi.org/10.1117/12.2031269
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
The influence of the method of series resistance determination on the extracted channel mobility is investigated in MOS transistors with relaxed and strained Ge channel. The dependence of the extracted mobility on the channel length and the frequency of the signal used to measure capacitance-voltage characteristics are examined.
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Jakub Jasiński, Lidia Łukasiak, Andrzej Jakubowski, Catarina Casteleiro, Terry E. Whall, Evan H. Parker, Maksym Myronov, David R. Leadley, "Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel", Proc. SPIE 8902, Electron Technology Conference 2013, 89020O (25 July 2013); doi: 10.1117/12.2031269; https://doi.org/10.1117/12.2031269
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