25 July 2013 Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020R (2013) https://doi.org/10.1117/12.2031279
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Analysis of the temperature effect on electrical characteristics of double barrier metal-oxide-semiconductor structure is presented in the work. Results of the simulation of electrical characteristics obtained with the original theoretical model are compared with the measurements of the fabricated DB MOS structure.
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Dominik Tanous, Dominik Tanous, Andrzej Mazurak, Andrzej Mazurak, Bogdan Majkusiak, Bogdan Majkusiak, } "Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure", Proc. SPIE 8902, Electron Technology Conference 2013, 89020R (25 July 2013); doi: 10.1117/12.2031279; https://doi.org/10.1117/12.2031279
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