25 July 2013 Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020S (2013) https://doi.org/10.1117/12.2031281
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
An influence of the potential in the quantum well in the DB MOS structure on its current-voltage characteristics is considered under the assumption of a sequential tunneling through the double barrier system due to the effective recombination in the well.
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Andrzej Mazurak, Dominik Tanous, Bogdan Majkusiak, "Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS", Proc. SPIE 8902, Electron Technology Conference 2013, 89020S (25 July 2013); doi: 10.1117/12.2031281; https://doi.org/10.1117/12.2031281
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