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25 July 2013 Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020S (2013) https://doi.org/10.1117/12.2031281
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
An influence of the potential in the quantum well in the DB MOS structure on its current-voltage characteristics is considered under the assumption of a sequential tunneling through the double barrier system due to the effective recombination in the well.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Mazurak, Dominik Tanous, and Bogdan Majkusiak "Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS", Proc. SPIE 8902, Electron Technology Conference 2013, 89020S (25 July 2013); https://doi.org/10.1117/12.2031281
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