25 July 2013 Fabrication of nanocrystallites in the SiOx matrix applicable in microelectronics
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Proceedings Volume 8902, Electron Technology Conference 2013; 89020V (2013) https://doi.org/10.1117/12.2031295
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
The development of the technology of fabricating hydrogenated amorphous silicon (a-Si:H) or silicon oxide (SiOx) matrix with nanocrystalline inclusions (nc-Si:H) is the next step in improving the properties of electronic devices, such as solar cells, thin film transistors (TFT), floating gate transistors and others. Those films exhibit increased stability, absorption and carrier mobility. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD), which is use to fabricate electronic devices. The technology was developed in the Semiconductor Thin Films and Solar Cells Laboratory at the Department of Electronics at the AGH University of Science and Technology. The author describes the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. The author also presents the results of the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H/SiOx matrix.
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Tomasz Kolodziej, "Fabrication of nanocrystallites in the SiOx matrix applicable in microelectronics", Proc. SPIE 8902, Electron Technology Conference 2013, 89020V (25 July 2013); doi: 10.1117/12.2031295; https://doi.org/10.1117/12.2031295
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