25 July 2013 Analysis of e-beam impact on the resist stack in e-beam lithography process
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Proceedings Volume 8902, Electron Technology Conference 2013; 890210 (2013) https://doi.org/10.1117/12.2031703
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.
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K. Indykeiwicz, B. Paszkiewicz, "Analysis of e-beam impact on the resist stack in e-beam lithography process", Proc. SPIE 8902, Electron Technology Conference 2013, 890210 (25 July 2013); doi: 10.1117/12.2031703; https://doi.org/10.1117/12.2031703
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