25 July 2013 Characterization of the optical beam emitted by high-power phase-locked arrays of diode lasers (P = 1 W CW)
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Proceedings Volume 8902, Electron Technology Conference 2013; 890217 (2013) https://doi.org/10.1117/12.2030182
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
The quality of the beam emitted by high-power laser diodes is still the main disadvantage of these devices. One of the ways to improve it is to design diode as a matrix of narrow active stripes – so called: phase-locked arrays. The optical coupling which is occurs in such devices causes the emission in the form of a few almost diffraction limited beams (lobes). Unfortunately, because of temperature dependence of refractive indices this coupling often disappears at high drive currents. In this paper the CW operation (up to 4Ith) of the phase-locked semiconductor laser arrays is reported. The devices are based on asymmetric heterostructure which is designed for improving thermal and electrical resistances. The single supermode operation is obtained and the lasers are emitted up to 1 W of the optical power in CW.
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Grzegorz Sobczak, Grzegorz Sobczak, Elżbieta Dąbrowska, Elżbieta Dąbrowska, Marian Teodorczyk, Marian Teodorczyk, Joanna Kalbarczyk, Joanna Kalbarczyk, Andrzej Maląg, Andrzej Maląg, "Characterization of the optical beam emitted by high-power phase-locked arrays of diode lasers (P = 1 W CW)", Proc. SPIE 8902, Electron Technology Conference 2013, 890217 (25 July 2013); doi: 10.1117/12.2030182; https://doi.org/10.1117/12.2030182

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