25 July 2013 Adjustment of sensivity of ISFET-type micro- and nanosensors
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Proceedings Volume 8902, Electron Technology Conference 2013; 89021U (2013) https://doi.org/10.1117/12.2030890
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
A study of pH sensitivity of miniature ISFET-type sensors with silicon nitride sensitive layer has been presented. 4 μm wide SOI FET microsensor process and 100 nm FinFET nanosensor process have been completed with oxygen plasma treatment. ID(VDS) and gds characteristics of the devices as well as source follower circuit output signal measurements have been reported. An influence of 1% HF etching of the gate dielectric on pH sensitivity of the sensors has been described and an explanation of phenomenon of the sensitivity adjustment has been proposed.
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Michał Zaborowski, Michał Zaborowski, Daniel Tomaszewski, Daniel Tomaszewski, Piotr Grabiec, Piotr Grabiec, "Adjustment of sensivity of ISFET-type micro- and nanosensors", Proc. SPIE 8902, Electron Technology Conference 2013, 89021U (25 July 2013); doi: 10.1117/12.2030890; https://doi.org/10.1117/12.2030890


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