The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures

T. Szymański; M. Wośko; B. Paszkiewicz; R. Paszkiewicz

doi:10.1117/12.2031051

25 July 2013 The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures

T. Szymański, M. Wośko, B. Paszkiewicz, R. Paszkiewicz

Proceedings Volume 8902, Electron Technology Conference 2013; 89022D (2013) https://doi.org/10.1117/12.2031051
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The influence of growth conditions on properties of high temperature GaN (HT-GaN) buffer used in AlGaN/GaN HEMT heterostructures was studied. Many various factors are presumed to have significant impact on the concluding properties of HT-GaN buffer. In this paper the nucleation layer growth time as well as temperature during high temperature GaN layer growth was selected as a factors alleged to cause variation in final GaN layer properties. The study was designed to show step by step improvement of HT-GaN buffer with consecutive changes of particular parameters. Electrical properties of the AlGaN/GaN heterostructures were determined using impedance spectroscopy method performed with HP 4192A impedance meter equipped in two contact mercury probe. Laser reflectance traces acquired in-situ during MOVPE (Metalorganic Vapor Phase Epitaxy) growth were compered and analyzed in order to correlate growth mechanism with electrical properties of HT-GaN buffer. The improvement of HT-GaN resistivity was shown through decrement of capacitance in the depleted space-charge region.

Citation Download Citation

T. Szymański, M. Wośko, B. Paszkiewicz, and R. Paszkiewicz "The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures", Proc. SPIE 8902, Electron Technology Conference 2013, 89022D (25 July 2013); https://doi.org/10.1117/12.2031051

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