Translator Disclaimer
Paper
25 July 2013 Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells
Author Affiliations +
Proceedings Volume 8902, Electron Technology Conference 2013; 89022G (2013) https://doi.org/10.1117/12.2031065
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Dilute nitride (In, Ga)(As, N) alloys grown on GaAs substrate are a very attractive materials for optoelectronics. In this work we compare the optical properties of (In, Ga)(As, N)/GaAs triple quantum well grown by atmospheric pressure metal organic vapour phase epitaxy. As grown and annealed structures were investigated by means of photoluminescence and contactless electroreflectance spectroscopies. Energies of fundamental transition from each measurement were determined and compared, moreover the value of Stokes shift was assigned and discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wojciech Dawidowski, Beata Ściana, Magdalena Latkowska, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Mikołaj Badura, and Marek Tłaczała "Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells", Proc. SPIE 8902, Electron Technology Conference 2013, 89022G (25 July 2013); https://doi.org/10.1117/12.2031065
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top