25 July 2013 Silicon nanowires reliability and robustness investigation using AFM-based techniques
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Proceedings Volume 8902, Electron Technology Conference 2013; 89022L (2013) https://doi.org/10.1117/12.2031229
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Silicon nanowires (SiNWs) have undergone intensive research for their application in novel integrated systems such as field effect transistor (FET) biosensors and mass sensing resonators profiting from large surface-to-volume ratios (nano dimensions). Such devices have been shown to have the potential for outstanding performances in terms of high sensitivity, selectivity through surface modification and unprecedented structural characteristics. This paper presents the results of mechanical characterization done for various types of suspended SiNWs arranged in a 3D array. The characterization has been performed using techniques based on atomic force microscopy (AFM). This investigation is a necessary prerequisite for the reliable and robust design of any biosensing system. This paper also describes the applied investigation methodology and reports measurement results aggregated during series of AFM-based tests.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomasz Bieniek, Tomasz Bieniek, Grzegorz Janczyk, Grzegorz Janczyk, Paweł Janus, Paweł Janus, Piotr Grabiec, Piotr Grabiec, Marek Nieprzecki, Marek Nieprzecki, Grzegorz Wielgoszewski, Grzegorz Wielgoszewski, Magdalena Moczała, Magdalena Moczała, Teodor Gotszalk, Teodor Gotszalk, Elizabeth Buitrago, Elizabeth Buitrago, Montserrat Fernandez-Bolaños Badia, Montserrat Fernandez-Bolaños Badia, Adrian M. Ionescu, Adrian M. Ionescu, } "Silicon nanowires reliability and robustness investigation using AFM-based techniques ", Proc. SPIE 8902, Electron Technology Conference 2013, 89022L (25 July 2013); doi: 10.1117/12.2031229; https://doi.org/10.1117/12.2031229
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