25 July 2013 Reactive impulse plasma ablation deposited barium titanate thin films on silicon
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Proceedings Volume 8902, Electron Technology Conference 2013; 89022O (2013) https://doi.org/10.1117/12.2031267
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Thin (100 nm) nanocrystalline dielectric films of lanthanum doped barium titanate were produced on Si substrates by means of reactive impulse plasma ablation deposition (IPD) from BaTiO3 + La2O3 (2 wt.%) target. Scanning electron microcopy and atomic force microscopy showed that the obtained layers were dense ceramics of uniform thickness with average roughness Ra = 2.045 nm and the average grain size of the order of 15 nm. Measurements of current-voltage (IV) characteristics of metal-insulator-semiconductor (MIS) structures, produced by evaporation of metal (Al) electrodes on top of barium titanate films, allowed to determine that the leakage current density and critical electric field intensity (EBR) of investigated layers ranged from 10-12 to 10-6 A cm-2 and from 0.2 to 0.5 MV cm-1, respectively. Capacitance-voltage (C-V) measurements of the same structures were performed in accumulation state showing that the dielectric constant value (εri) of films is of the order of 20.
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A. Werbowy, A. Werbowy, P. Firek, P. Firek, N. Kwietniewski, N. Kwietniewski, A. Olszyna, A. Olszyna, } "Reactive impulse plasma ablation deposited barium titanate thin films on silicon", Proc. SPIE 8902, Electron Technology Conference 2013, 89022O (25 July 2013); doi: 10.1117/12.2031267; https://doi.org/10.1117/12.2031267
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