Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy

Mikołaj Badura; Beata Ściana; Damian Radziewicz; Damian Pucicki; Katarzyna Bielak; Wojciech Dawidowski; Paulina Kamyczek; Ewa Płaczek-Popko; Marek Tłaczała

doi:10.1117/12.2031297

25 July 2013 Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy

Mikołaj Badura, Beata Ściana, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Wojciech Dawidowski, Paulina Kamyczek, Ewa Płaczek-Popko, Marek Tłaczała

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Proceedings Volume 8902, Electron Technology Conference 2013; 89022Q (2013) https://doi.org/10.1117/12.2031297
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

Over the last few years, ternary and quaternary semiconductor compounds containing (Ga, In) and (N, As) elements become subject of many studies. Both, indium and nitrogen, lowers the band gap of gallium arsenide, but their influence on lattice parameter is compensated. As a result it is possible to deposit epitaxial layers of 1 eV , or less, material which is matched to GaAs substrate. GaAs technology is well known and much cheaper than more sophisticated phosphorus alloys. Optoelectronic devices composed of dilute nitrides materials can be widely used as a telecommunication lasers, photodetectors or even photovoltaic cells. Investigated samples were performed using atmospheric-pressure MOVPE system with AIXTRON AIX200 R-and-D reactor. GaNAs layers were deposited as bulk layers, while GaInNAs material grown as bulk and additionally as quantum wells with GaAs barriers. Gallium arsenide substrates were utilized. Studies were performed utilizing Raman spectroscopy at room temperature. Phonons were excited using 514 nm Ar+ laser. Characteristic for such structures GaN-like local vibrational mode was observed to change its position with changing nitrogen concentration. GaAs-like longitudinal optic phonon also was investigated. As a result an attempt to measure nitrogen concentration in mentioned materials using Raman spectroscopy was performed.

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Mikołaj Badura, Beata Ściana, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Wojciech Dawidowski, Paulina Kamyczek, Ewa Płaczek-Popko, and Marek Tłaczała "Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy", Proc. SPIE 8902, Electron Technology Conference 2013, 89022Q (25 July 2013); https://doi.org/10.1117/12.2031297

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