Characterizations of GaInNAs/GaAs quantum wells

Katarzyna Bielak; Damian Pucicki; Beata Ściana; Damian Radziewicz; Wojciech Dawidowski; Mikolaj Badura; Robert Kudrawiec; Jarosław Serafińczuk; Marek Tłaczała

doi:10.1117/12.2031298

25 July 2013 Characterizations of GaInNAs/GaAs quantum wells

Katarzyna Bielak, Damian Pucicki, Beata Ściana, Damian Radziewicz, Wojciech Dawidowski, Mikolaj Badura, Robert Kudrawiec, Jarosław Serafińczuk, Marek Tłaczała

Author Affiliations +

Proceedings Volume 8902, Electron Technology Conference 2013; 89022R (2013) https://doi.org/10.1117/12.2031298
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

Heterostructures of GaInNAs/GaAs multiple quantum wells were characterized by high resolution x-ray diffraction. Complexity and stress compensating effect of such quaternary alloys cause many characterization problems. One of the most important issue is determination of composition of the material, which cannot be performed utilizing only one characterization method. That is why structural analysis had to be related with optical measurements which give different information correlated with composition. A comparison of theoretical calculations of energy band gap with energy of transitions in GaInNAs QWs from photoluminescence or contactless electro-reflectance measurements supplement the results of HRXRD and gives complete information about the structure required as a feedback to develop technology of heterostructures epitaxial growth.

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Katarzyna Bielak, Damian Pucicki, Beata Ściana, Damian Radziewicz, Wojciech Dawidowski, Mikolaj Badura, Robert Kudrawiec, Jarosław Serafińczuk, and Marek Tłaczała "Characterizations of GaInNAs/GaAs quantum wells", Proc. SPIE 8902, Electron Technology Conference 2013, 89022R (25 July 2013); https://doi.org/10.1117/12.2031298

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