25 July 2013 Structural analysis of epitaxial NbTiN films
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Proceedings Volume 8902, Electron Technology Conference 2013; 89022S (2013) https://doi.org/10.1117/12.2031303
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Progress in quality of ultrathin superconducting niobium nitride films for fabrication technology of single photon detectors is here presented. The films deposited on Al2O3 single crystals reveal excellent both superconducting and structure properties but the films deposited on Si single crystals have really worse parameters. High epitaxial quality of NbN and NbTiN films grown on the Al2O3 substrates is proved by HRXRD and HRTEM studies. The results of the studies on both NbN and NbTiN films reveal one cubic NbN phase with NaCl-type structure, and the planes of NbN are correlated with Al2O3 crystal orientation. The critical temperatures of NbN and NbTiN films with thickness of few nm grown on the Al2O3 and Si substrates are in range 4K ÷ 7K, but post-grown annealing of the films at 1000°C in Ar increases temperature about 10K. Moreover, the NbTiN film deposited on sapphire at optimized conditions and annealed discloses the best superconducting properties - critical temperature of 14 K as well as extremely high critical current density of 12·106 A/cm2. This is the best results measured on so thin superconducting films and not reported up to now. The improvement in superconductor parameters is explained here due to reduced strain and defects by high temperature annealing of the film. Structural analysis on the annealed NbTiN films by XRD measurement confirms that FWHM of the 111 Bragg reflection is extremely narrow, about value of 10 arcsec characterising the best single crystals.
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M. Guziewicz, M. Guziewicz, A. Laszcz, A. Laszcz, J. Z. Domagala, J. Z. Domagala, K. Golaszewska, K. Golaszewska, J. Ratajczak, J. Ratajczak, R. Kruszka, R. Kruszka, M. Juchniewicz, M. Juchniewicz, A. Czerwinski, A. Czerwinski, W. Slysz, W. Slysz, "Structural analysis of epitaxial NbTiN films ", Proc. SPIE 8902, Electron Technology Conference 2013, 89022S (25 July 2013); doi: 10.1117/12.2031303; https://doi.org/10.1117/12.2031303

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