25 October 2013 Technology and characterization of 4H-SiC p-i-n junctions
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Proceedings Volume 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013; 89030V (2013) https://doi.org/10.1117/12.2035436
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 2013, Wilga, Poland
Abstract
Silicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10-9A/cm2.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Kociubiński, Andrzej Kociubiński, Mariusz Duk, Mariusz Duk, Monika Masłyk, Monika Masłyk, Norbert Kwietniewski, Norbert Kwietniewski, Mariusz Sochacki, Mariusz Sochacki, Michał Borecki, Michał Borecki, Michael Korwin-Pawłowski, Michael Korwin-Pawłowski, } "Technology and characterization of 4H-SiC p-i-n junctions", Proc. SPIE 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 89030V (25 October 2013); doi: 10.1117/12.2035436; https://doi.org/10.1117/12.2035436
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