11 September 2013 Temperature characteristic of InAs/Ga(In)Sb middle wavelength infrared detectors
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Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 890702 (2013) https://doi.org/10.1117/12.2034304
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
InAs/Ga(In)Sb type-II superlattice infrared detectors based on mature III-V material and devices technology has lots of advantages such as tunable energy structure and wide response wavelength range, low dark current and high performance under high temperature, etc. It has been chosen as the Third-Generation infrared detector and developed rapidly in recent ten years. In this paper both theoretical and experimental study have been performed to indicate high temperature operation characterization for the InAs/Ga(In)Sb type-II superlattice middle wavelength infrared detectors . Photo-generated carriers, the ratio of photo conductance and dark conductance were calculated by balance equation method. The dependence of I-V, optical response, device detectivity on temperature has been tested and studied to disclose temperature characteristic of the InAs/Ga(In)Sb type-II superlattice infrared detectors. The results verify the middle wavelength InAs/Ga(In)Sb type-II superlattice infrared detectors can operate at high temperature with high performance.
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Yan-li Shi, Rui Hui, Wei-Feng Zhang, Wen-Jin He, Jin Yuan, Jiang-Min Feng, Fan Li, Li-Ming Liu, "Temperature characteristic of InAs/Ga(In)Sb middle wavelength infrared detectors", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890702 (11 September 2013); doi: 10.1117/12.2034304; https://doi.org/10.1117/12.2034304
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