11 September 2013 Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy
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Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 89073J (2013) https://doi.org/10.1117/12.2034009
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
In this paper we reported our systematic studies on InSb interface growth in InAs/GaSb SLs structure. Two typical interfaces growth mode, migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE), were designed for the 12 ML InAs/12 ML GaSb SLs material and the detail properties were discussion by the experimental measurement and simulation analysis. Our results indicated that the surface of SLs sample with the InSb interface layers grown by MEE method shows smaller RMS both on the 2 μm x 2 μm and 50 μm x 50 μm scan area by AFM measurement, and its PL intensity is about 1.3 times stronger than that of SLs sample grown by MBE. Besides, the MEE samples had significant As composition in InSb interface layers which was extracted by the HRXRD fitting.
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Zhicheng Xu, Jianxin Chen, Fangfang Wang, Yi Zhou, Qingqing Xu, Chuan Jin, Li He, "Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89073J (11 September 2013); doi: 10.1117/12.2034009; https://doi.org/10.1117/12.2034009
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