Thermal annealing effects on the properties of intersubband absorption in CdS/ZnSe and (CdS/ZnSe)/BeTe II-VI quantum wells

Bing-Sheng Li; Ryoichi Akimoto; Aidong Shen

doi:10.1117/12.2034320

11 September 2013 Thermal annealing effects on the properties of intersubband absorption in CdS/ZnSe and (CdS/ZnSe)/BeTe II-VI quantum wells

Bing-Sheng Li, Ryoichi Akimoto, Aidong Shen

Author Affiliations +

Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 89073Y (2013) https://doi.org/10.1117/12.2034320
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The authors report the study of thermal annealing (TA) effects on the intersubband transitions (ISB-T) properties in (CdS/ZnSe)/BeTe and CdS/ZnSe multiple quantum wells (MQWs). The samples were grown on (001)-GaAs substrates by molecular beam epitaxy. With the increase of annealing temperature, the ISB-T shifts to longer wavelength in (CdS/ZnSe)/BeTe MQWs, but to short wavelength in CdS/ZnSe MQWs. The ISB absorption vanishes at the annealing temperature of 270 °C for CdS/ZnSe QWs while survives to up to 440 °C for (CdS/ZnSe)/BeTe QWs. For (CdS/ZnSe)/BeTe MQWs after 20 minutes of TA, absorption wavelength and intensity become stable. For CdS/ZnSe MQWs, however we observed a blue shift in wavelength accompanied by a decrease of intensity after 45 minutes of TA. Photo-induced ISB-T measurements indicate that the disappearance of ISB absorption results from the loss of free-carriers in the well layers. ω/2θ scan and two-dimensional reciprocal space mapping (2DRSM)) measurements of X-ray diffraction (XRD) indicate that a built-up of tensile strain and interdiffusion at interfacial region in the annealed (CdS/ZnSe)/BeTe heterostructrues. 2DRSM also shows the enhanced structural relaxation in CdS/ZnSe MQWs. Based on the XRD analysis, the effects of TA on the ISB-T in (CdS/ZnSe)/BeTe and CdS/ZnSe MQWs are explained.

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Bing-Sheng Li, Ryoichi Akimoto, and Aidong Shen "Thermal annealing effects on the properties of intersubband absorption in CdS/ZnSe and (CdS/ZnSe)/BeTe II-VI quantum wells", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89073Y (11 September 2013); https://doi.org/10.1117/12.2034320

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KEYWORDS

Quantum wells

Annealing

Absorption

Thermal effects

Electrons

Diffusion

Cadmium

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