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11 September 2013 Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum
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Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 890753 (2013) https://doi.org/10.1117/12.2034902
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.
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Dan Shi, Ming-hui You, Zhan-Guo Li, Guo-jun Liu, Lin Li, Zhong-liang Qiao, and Xiao-hui Ma "Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890753 (11 September 2013); https://doi.org/10.1117/12.2034902
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