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11 September 2013 Research of extended-wavelength 64x64 In0.83Ga0.17As focal plane arrays
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Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 890755 (2013) https://doi.org/10.1117/12.2034923
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Planar 64x64 In0.83Ga0.17As focal plane arrays (FPA) were fabricated in this paper. The properties of In0.83Ga0.17As photodetectors such as I-V, responsivity, detectivity were characterized. Theoretical analysis and measurement of the dark current behavior of the detectors at 200-300K were presented. The typical bad pixels caused by excessive dark current were analyzed, the result shows that they are mainly caused by more ohmic current and trap-assisted tunneling current component. Dark current density is 0.986μA/cm2 at an operating temperature of 200K and a bias voltage of -10 mV. The relative spectral response is in the range of 1.38 μm to 2.6 μm at 280K. The peak spectral response wavelength and quantum efficiency are 2.2 μm and 71.2% at 280K respectively. The achieved peak detectivity can reach 4.05x1011cmHz1/2W-1 by thermoelectric cooling at 200K.
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Ming Shi, Tao Li, Xiumei Shao, Xue Li, and Haimei Gong "Research of extended-wavelength 64x64 In0.83Ga0.17As focal plane arrays", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890755 (11 September 2013); https://doi.org/10.1117/12.2034923
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