11 September 2013 Dark current characterization and simulation for In0.78Ga0.22As PIN photodetectors
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Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 89075A (2013) https://doi.org/10.1117/12.2034957
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
The dark current characterization of InxGa1-xAs with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with Et= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of InxGa1-xAs( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.
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Baiqing Liu, Baiqing Liu, Xiaoli Ji, Xiaoli Ji, Yiming Liao, Yiming Liao, Feng Yan, Feng Yan, Henqing Tang, Henqing Tang, Xue Li, Xue Li, Haimei Gong, Haimei Gong, } "Dark current characterization and simulation for In0.78Ga0.22As PIN photodetectors", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89075A (11 September 2013); doi: 10.1117/12.2034957; https://doi.org/10.1117/12.2034957
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