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21 August 2013 Solid-state ultrafast all-optical x-ray imaging sensor enabling picosecond temporal resolution
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Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89082C (2013) https://doi.org/10.1117/12.2034893
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Here we report an ultrafast x-ray imaging sensor based on optical measurement of the effects of x-ray absorption and electron hole pair creation in a direct band-gap semiconductor. Our results indicate that this technology can be used to provide a new approach for x-ray detectors and x-ray imaging systems with picosecond temporal resolution at x-ray energies ~10 keV. The x-ray absorption in GaAs produces a transient, non-equilibrium, electron-hole pair distribution which is then sensed by the phase modulation of the optical probe beam. The basic physics of the detector, implementation considerations, and preliminary experimental data are presented and discussed. Through further development, this x-ray imaging sensor could provide insight into previously unmeasurable phenomena in many fields.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bo Wang, Yonglin Bai, Peng Xu, Baiyu Liu, Bingli Zhu, Wenzheng Yang, Xiaohong Bai, Junjun Qin, and Yongsheng Gou "Solid-state ultrafast all-optical x-ray imaging sensor enabling picosecond temporal resolution", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082C (21 August 2013); https://doi.org/10.1117/12.2034893
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