21 August 2013 3D TCAD simulation of the pixel for TOF
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Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89082I (2013) https://doi.org/10.1117/12.2034994
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
This paper presents the design and the simulation of pixel for real time three dimensional (3D) measurements based on Time of Flight (TOF) technique. The pixel is designed to detect the time delay between transmitted and reflected light. Based on 4T active pixel, A TXD transfer gate is added to realize TOF function. In order to enhance lateral drift field, the pixel adopts a split device structure. The implant energy and dose of photodiode are simulated in 2D carefully with simulation tool TCAD. 3D simulation is presented to verify the 3D measurement function of the pixel. The simulation results show that proposed pixel can achieve 10ns transfer time and meet the requirement for TOF.
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Shan Di, Shan Di, Zhongxiang Cao, Zhongxiang Cao, Yangfan Zhou, Yangfan Zhou, Nanjian Wu, Nanjian Wu, } "3D TCAD simulation of the pixel for TOF", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082I (21 August 2013); doi: 10.1117/12.2034994; https://doi.org/10.1117/12.2034994
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