Single-photon sources based on InAs/GaAs QDs for solar cell

Wei Jia; Zhi Liu; Xunchun Wang

doi:10.1117/12.2035109

21 August 2013 Single-photon sources based on InAs/GaAs QDs for solar cell

Wei Jia, Zhi Liu, Xunchun Wang

Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89082P (2013) https://doi.org/10.1117/12.2035109
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

We have grown InAs/GaAs quantum dots (QDs) by droplet epitaxy for application in single photon sources. This growth method enables the formation of QDs without strain, with emission wavelengths of around 1.3μm within the optimal detection range of cost effective silicon detector, and with reduced surface density of several tens to a few QDs per μm2 for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and biexciton emission peaks identified from power dependent and time-resolved micro-photoluminescence (μ-PL) measurements.

Citation Download Citation

Wei Jia, Zhi Liu, and Xunchun Wang "Single-photon sources based on InAs/GaAs QDs for solar cell", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082P (21 August 2013); https://doi.org/10.1117/12.2035109

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