Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process

Zhao-yang Liu; Li-yuan Liu; Nan-jian Wu

doi:10.1117/12.2034985

23 August 2013 Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process

Zhao-yang Liu, Li-yuan Liu, Nan-jian Wu

Proceedings Volume 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications; 89091E (2013) https://doi.org/10.1117/12.2034985
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

This paper presents a design of 1-THz imaging detectors implemented in 180-nm standard CMOS process. Device simulator is adopted to simulate the performances of the detectors and the results are well consistent with the theoretical predictions. An on-chip patch antenna is designed aided by HFSS. The simulated peak directivity and gain of antenna are 6.9dBi and 4.4dBi, respectively. The -10dB impedance bandwidth of the antenna is 28 GHz, which corresponds to 2.8% relative bandwidth. To improve power transfer efficiency, we extract the input impedance of the MOSFET and design a matching network inserted between the MOSFET and antenna. Imaging pixels have been arranged in a 3 x 5 array in 180-nm standard CMOS process.

Citation Download Citation

Zhao-yang Liu, Li-yuan Liu, and Nan-jian Wu "Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process", Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 89091E (23 August 2013); https://doi.org/10.1117/12.2034985

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