30 August 2013 Calculate IR optical constants of Si substrate under high temperature condition
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Proceedings Volume 8910, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications; 89100C (2013) https://doi.org/10.1117/12.2031884
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
A high temperature infrared spectra measuring equipment connected with a FTIR spectrometer (PE) was designed and manufactured. The measuring temperature can range from room-temperature to 500°C and the infrared spectra of substrates and thin films under different temperature can be real-time measured. The Fourier transform infrared transmission spectra of Si substrate under different working temperature were measured in the wavelength region from 2μm to 20μm using high temperature infrared spectra measuring equipment. The measured temperature ranged from room temperature to 500°C with a step of 50°C. Complex dielectric functions of Si substrate under different temperature condition are calculated from FTIR transmittance spectra by WVASE32 software, and the best fitted method was obtained for calculating optical constants of dielectric materials in the high temperature condition. As the increase of working temperature, the refractive index and extinction coefficient of Si substrate increase, when the working temperature reach 300°C, the various quantity of extinction coefficient sharply increase, so Si substrate can be used in the condition below the temperature of 300°C. Thus, through the exact calculated complex dielectric functions under different working temperature condition, we can design and manufacture different thin films using Si as substrate, and applied in in the high temperature condition.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yugang Jiang, Yugang Jiang, Lishuan Wang, Lishuan Wang, Huasong Liu, Huasong Liu, Dandan Liu, Dandan Liu, Chenghui Jiang, Chenghui Jiang, Deying Chen, Deying Chen, Yaping Yang, Yaping Yang, Yiqin Ji, Yiqin Ji, } "Calculate IR optical constants of Si substrate under high temperature condition", Proc. SPIE 8910, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications, 89100C (30 August 2013); doi: 10.1117/12.2031884; https://doi.org/10.1117/12.2031884
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