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23 August 2013 A review of developments in the preparation methods of tantalum pentoxide film
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Proceedings Volume 8911, International Symposium on Photoelectronic Detection and Imaging 2013: Micro/Nano Optical Imaging Technologies and Applications; 89110B (2013) https://doi.org/10.1117/12.2033531
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Tantalum pentoxide film has a huge application potential in microelectronic field owing to its good chemical stability and thermal stability, and its good compatibility with semiconductor integrated circuit. In addition, Tantalum pentoxide film also has a high dielectric constant, a high refractive index, low absorption rate and a wide spectral range from 300nm to 1000nm in the visible spectral region. At present, it has a wide application in antireflection coatings, lasers, optical communication, solar wafers and so on. This review will focus on the preparation methods of Tantalum pentoxide film, and tantalum pentoxide film’s property and application, which are better for us to choose an appropriate method in an appropriate occasion.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuilan Hu, Runling Peng, Yifan Li, and Jiabi Chen "A review of developments in the preparation methods of tantalum pentoxide film ", Proc. SPIE 8911, International Symposium on Photoelectronic Detection and Imaging 2013: Micro/Nano Optical Imaging Technologies and Applications, 89110B (23 August 2013); https://doi.org/10.1117/12.2033531
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