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16 August 2013 Influences of temperature and concentrations on morphology of TMAH anisotropic etching for silicon microchannel plate
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Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120B (2013) https://doi.org/10.1117/12.2032481
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Anisotropic etching of monocrystalline silicon plays an important role in Microsystems technology in the recent years. TMAH, as one of the anisotropic etchants, is used to fabricate pores with square cross-section. Careful choice of concentration, isopropyl alcohol additives and temperature of alkaline solution allows for certain crystallographic directions to be preferentially etched. In this way, pores with square, eight-sided (octagonal) or rotated square shapes can be attained and convert to each other. We show the etch selectivity on (100) and (110) planes in TMAH solution with low concentration. The etch rates on (100) and (110) planes at different temperature and concentration has been measured. The results indicated that the perfect orthogonal array of pores with sharp edges and corners can be obtained at more than 40℃ in 1wt% TMAH solution. There is good etch selectivity on (110) surface and the etch rate on (110) surface is slower than (100) surface under the condition.
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Yong-zhao Liang, Qing-duo Duanmu, Ji-kai Yang, Guo-zheng Wang, Jin Chai, Fengyuan Yu, Yao Zhang, and Shu-xiao Fan "Influences of temperature and concentrations on morphology of TMAH anisotropic etching for silicon microchannel plate", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120B (16 August 2013); https://doi.org/10.1117/12.2032481
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