ROIC for HgCdTe e-APD FPA

Guoqiang Chen; Junling Zhang; Pan Wang; Jie Zhou; Lei Gao; Ruijun Ding

doi:10.1117/12.2032849

16 August 2013 ROIC for HgCdTe e-APD FPA

Guoqiang Chen, Junling Zhang, Pan Wang, Jie Zhou, Lei Gao, Ruijun Ding

Author Affiliations +

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120F (2013) https://doi.org/10.1117/12.2032849
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

Ultra-low light imaging and passive/active dual mode imaging require very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In my work, a passive/active dual mode readout integrated circuit (ROIC) of e-APD focal plane array (FPA) is designed. Unit cell circuit architecture of ROIC includes a capacitance feedback transimpedance amplifier (CTIA) as preamplifier of ROIC, a high voltage protection module, a comparator, a Sample-Hold circuit module, and output driver stage. There is a protection module in every unit cell circuit which can avoid ROIC to be damaged from avalanche breakdown of some diodes of detector. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area rather than Laterally Diffused Metal Oxide Semiconductor (LDMOS) in high voltage BCD process in the limited 100um×100um pitch area. In CTIA module, three integration capacitances are included in the CTIA module, two of them are switchable to provide different well capacity and noise. Constraints such as pixel area, stability and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier. High voltage protection module can protect ROIC to be damaged because of breakdown of some avalanche diodes.

Citation Download Citation

Guoqiang Chen, Junling Zhang, Pan Wang, Jie Zhou, Lei Gao, and Ruijun Ding "ROIC for HgCdTe e-APD FPA", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120F (16 August 2013); https://doi.org/10.1117/12.2032849

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