16 August 2013 Monte Carlo simulations on particle transmission characteristics of BN ion barrier films
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Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120G (2013) https://doi.org/10.1117/12.2032917
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
The simulation calculation and analysis on the electron transmittance and ion stopping power for ion barrier films (IBFs) of BN were performed by Monte Carlo methods. The interaction model between particles and solids were described. We find the Dead Voltage of BN IBFs is 220V. When the energy of the incident ions is 0.2~0.3KeV, 91%—99% of C+, N+ and O+ are stopped by BN IBFs; while 12%—19% of H+ for BN IBF. The results indicate that BN is an idea candidate for ion barrier films. This work provided a theory support for fabricating high performance low-level-light device.
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Bo Sun, Shencheng Fu, Xin Xie, Liu Feng, Gangcheng Jiao, Qingduo Duanmu, "Monte Carlo simulations on particle transmission characteristics of BN ion barrier films", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120G (16 August 2013); doi: 10.1117/12.2032917; https://doi.org/10.1117/12.2032917
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