Development of photocathode and device of near-shortwave infrared extension

Mei-na Luo; Ting-zhu Bai; Hui Guo

doi:10.1117/12.2033012

16 August 2013 Development of photocathode and device of near-shortwave infrared extension

Mei-na Luo, Ting-zhu Bai, Hui Guo

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120H (2013) https://doi.org/10.1117/12.2033012
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

HgCdTe and InGaAs material are able to detect near-shortwave infrared extension. The progress of HgCdTe and InGaAs material and their performances have been discussed. This article mainly presented three aspects of InGaAs negative electron affinity (NEA) photocathode and image intensifier which are widely used in near-shortwave infrared devices: the research status, the possible application prospects and the trend.

Citation Download Citation

Mei-na Luo, Ting-zhu Bai, and Hui Guo "Development of photocathode and device of near-shortwave infrared extension", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120H (16 August 2013); https://doi.org/10.1117/12.2033012

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