Characterization study of native oxides on GaAs(100) surface by XPS

Liu Feng; Lian-dong Zhang; Hui Liu; Xiang Gao; Zhuang Miao; Hong-chang Cheng; Long Wang; Sen Niu

doi:10.1117/12.2033679

16 August 2013 Characterization study of native oxides on GaAs(100) surface by XPS

Liu Feng, Lian-dong Zhang, Hui Liu, Xiang Gao, Zhuang Miao, Hong-chang Cheng, Long Wang, Sen Niu

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120N (2013) https://doi.org/10.1117/12.2033679
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

In order to know more about the surface state of GaAs(100) epitaxial wafer during a storage period of two years, the XPS analysis was carried out four times on the surface, respectively polished by chemical etching, stored in desiccator for half a year, one year and two years. The results indicated that even after cleaned by proper etchant solutions, the fresh surface was slightly oxidized with Ga₂O₃, As₂O₃ and organic contaminant. The epi-wafer was always exposed to air during the storage period, so more and more oxides turned out. The mixed oxide layer comprised of C-OR, COOR, Ga₂O₃, As₂O₃ and As₂O₅ appeared after only half a year. In the ageing process of two years, the oxide types of gallium or arsenic did not change with stable content of Ga₂O₃ and remarkably fluctuating relative contents of As₂O₃ and As₂O₅. Based on the intensity ratio of Ga 3d-Ga₂O₃ to Ga 3d-GaAs, the thickness of oxide layer was estimated. The oxide layer generated after chemical polishing was very thin, just only 0.435nm thick, and then it grew rapidly, approximately 1.822nm after one year while almost no change any more subsequently. It was indicated that after the epi-wafer was stored for one year, because of volatile As₂O₃ or As₂O₅, there remained a large amount of Ga₂O₃ in oxide layer, which prevented the reactions between bulk material and oxide layer with oxygen. So native oxide layer plays a role as passive film to protect epi-wafer against the environment during a long storage period.

Citation Download Citation

Liu Feng, Lian-dong Zhang, Hui Liu, Xiang Gao, Zhuang Miao, Hong-chang Cheng, Long Wang, and Sen Niu "Characterization study of native oxides on GaAs(100) surface by XPS", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120N (16 August 2013); https://doi.org/10.1117/12.2033679

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