Simulations on the electron back-scattering characteristics of ion barrier film

Shencheng Fu; Bo Sun; Qi Wang; Gangcheng Jiao; Liu Feng; Ye Li

doi:10.1117/12.2033686

16 August 2013 Simulations on the electron back-scattering characteristics of ion barrier film

Shencheng Fu, Bo Sun, Qi Wang, Gangcheng Jiao, Liu Feng, Ye Li

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120P (2013) https://doi.org/10.1117/12.2033686
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The simulation calculation and analysis of electron back-scattering characteristics for ion barrier films (IBFs) of Al2O3 was performed by Monte Carlo methods. A physical model for the interaction of low-energy electrons with solid was described. Trajectory and spatial distribution of the electrons were simulated with MATLAB software.The maximum ratio of the back-scattered electrons was 19% at the incident energy of 0.24 keV. Beyond this value, the number of backscattered electron decreased slowly with the increase of the incident energy. The back-scattering ratio increased almost linearly with the increase of IBF density. When the incident energy was 0.7 keV and the film thickness is higher than 7 nm, the electron back-scattering ratio was always ~17% for the Al2O3 IBF. This work provided a theory support for fabricating high performance low-level-light device.

Citation Download Citation

Shencheng Fu, Bo Sun, Qi Wang, Gangcheng Jiao, Liu Feng, and Ye Li "Simulations on the electron back-scattering characteristics of ion barrier film", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120P (16 August 2013); https://doi.org/10.1117/12.2033686

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