16 August 2013 Research of data retention in EEPROM cells
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Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120V (2013) https://doi.org/10.1117/12.2033790
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
This paper investigates date retention ability of EEPROM cells for a given voltage or temperature by theory and experiment. The expression of EEPROM date retention is derived. In the temperature acceleration experiment, the logarithm of device inactivation time have linear ratio with temperature according to Arrhenius formula and the device life retention was acquired in the various temperature. According to Arrhenius equation, lifetime curve is deduced. In the electric acceleration experiment, because of the charge leaking on the floating-gate, the threshold voltage would decrease gradually. In the log-log plot, the decrease efficiency of threshold voltage have linear ratio with time. Under the assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide, date retention time of EEPROM cells is derived and the experience formula is derived by experiment.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Cheng, Ni Zhang, Cang-lu Hu, Gang-cheng Jiao, Zhuang Miao, Ling-yun Fu, Feng Liu, "Research of data retention in EEPROM cells", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120V (16 August 2013); doi: 10.1117/12.2033790; https://doi.org/10.1117/12.2033790
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