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16 August 2013 Mechanism analysis of Gen Ⅲ LLL image intensifier GaAs cathode photoelectric emission disability
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Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 891213 (2013) https://doi.org/10.1117/12.2034316
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
The focus of the third generation image intensifier photocathode sensitivity decreases in the GaAs are analyzed, and proposed solutions,experimental results show that the tube microchannel plate(mcp), screen GaAs cathode discharge gas is caused by decreased sensitivity of the main reasons. Paper used two-layer model, and even negative electron affinity(NET) interface barrier theory of the photoelectric cathode drop mechanism was discussed , when the photocathode emission levels of CO adsorption and other harmful gas, chemical adsorption layer of ionic bond formation will lead to production of cathode surface barrier interfaces. Cathode surface adsorption of the pollutants more ,the interface barrier becomes thicker, the smaller the electron surface escape probability, when the cathode interface thicker barrier to the electron surface escape is zero, the cathode photoemission end of life.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiangtao Xu, Lei Yan, Yaojin Cheng, Kunye Han, Beibei Liu, and Taimin Zhang "Mechanism analysis of Gen Ⅲ LLL image intensifier GaAs cathode photoelectric emission disability", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 891213 (16 August 2013); https://doi.org/10.1117/12.2034316
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