16 August 2013 Calculation of integral photoluminescence for the GaAs photocathode bonding assembly
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Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 891217 (2013) https://doi.org/10.1117/12.2034461
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
The ideal status of the GaAs photocathode bonding assembly is as fellows: the GaAs photocathode should not have additional stress; the crystal lattice should keep integrity after deposited Si3N4 reflection reducing coating and bonging process that GaAs epitaxial material on a glass window. In order to estimating the bonding quality of the GaAs photocathode bonding assembly, integral photoluminescence intensity was calculated on the ideal bonding condition. Assuming the energy of incident light was absorbed by GaAs active layer except reflection, according to the optical character of the GaAs photocathode bonding assembly, the value was calculated. This value could be the standard to assess the quality of the GaAs photocathode bonding assembly and improve the bonding technology that the GaAs epitaxial material is bonded to a glass window.
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Chi Feng, Chi Feng, Gangcheng Jiao, Gangcheng Jiao, Wei Cheng, Wei Cheng, Chaxia Peng, Chaxia Peng, Zhuang Miao, Zhuang Miao, } "Calculation of integral photoluminescence for the GaAs photocathode bonding assembly", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 891217 (16 August 2013); doi: 10.1117/12.2034461; https://doi.org/10.1117/12.2034461
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