11 October 2013 Nanophotonic silicon electro-optic switch
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Proceedings Volume 8915, Photonics North 2013; 89151S (2013) https://doi.org/10.1117/12.2037810
Event: Photonics North 2013, 2013, Ottawa, Canada
Abstract
The combination of silicon and nanotechnology offers the possibility to design ultrafast silicon electro-optic switches with speeds of the order of 100 GHz. The design procedure for an ultrafast silicon electro-optic switch with the addition of photonic crystals is presented. The material medium selected for propagation of the optical signal through the switch is silicon nanocrystals in silica. A patterned slot waveguide with one-dimensional photonic crystals is proposed as the preferred slow light waveguide to be used in the design of the electro-optic switch. The ultrafast quadratic electro-optic effect or Kerr effect is the physical effect utilized, and its analysis for slot waveguides is discussed. The optical structure analysis of the electro-optic switch using a ring resonator is presented and it is shown theoretically that the use of a slow light waveguide in the ring resonator can reduce the required externally applied electric field or the radius of the ring resonator.
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Deepak V. Simili, Michael Cada, "Nanophotonic silicon electro-optic switch", Proc. SPIE 8915, Photonics North 2013, 89151S (11 October 2013); doi: 10.1117/12.2037810; https://doi.org/10.1117/12.2037810
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