THz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs

G. Seniutinas; G. Gervinskas; E. Constable; A. Krotkus; G. Molis; G. Valušis; R. A. Lewis; S. Juodkazis

doi:10.1117/12.2033746

7 December 2013 THz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs

G. Seniutinas, G. Gervinskas, E. Constable, A. Krotkus, G. Molis, G. Valušis, R. A. Lewis, S. Juodkazis

Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 892322 (2013) https://doi.org/10.1117/12.2033746
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia

Abstract

A terahertz (THz or T-rays) photomixer consisting of a meander type antenna with integrated nanoelectrodes on a low temperature grown GaAs (LT-GaAs) is demonstrated. The antenna was designed for molecular fingerprinting and sensing applications within a spectral range of 0.3-0.4 THz. A combination of electron beam lithography (EBL) and focused ion beam (FIB) milling was used to fabricate the T-ray emitter. Antenna and nanoelectrodes were fabricated by standard EBL and lift-off steps. Then a 40-nm-wide gap in an active photomixer area separating the nanoelectrodes was milled by a FIB. The integrated nano-contacts with nano-gaps enhance the illuminated light and THz electric fields as well as contribute to a better collection of photo-generated electrons. T-ray emission power from the fabricated photomixer chips were few hundreds of nanowatts at around 0.15 THz and tens of nanowatts in the 0.3-0.4 THz range.

Citation Download Citation

G. Seniutinas, G. Gervinskas, E. Constable, A. Krotkus, G. Molis, G. Valušis, R. A. Lewis, and S. Juodkazis "THz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892322 (7 December 2013); https://doi.org/10.1117/12.2033746

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