Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Yamina André; Agnès Trassoudaine; Geoffrey Avit; Kaddour Lekhal; Mohammed R. Ramdani; Christine Leroux; Guillaume Monier; Christelle Varenne; Philip Hoggan; Dominique Castelluci; Catherine Bougerol; François Réveret; Joël Leymarie; Elodie Petit; Vladimir G. Dubrovskii; Evelyne Gil

doi:10.1117/12.2035485

7 December 2013 Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Yamina André, Agnès Trassoudaine, Geoffrey Avit, Kaddour Lekhal, Mohammed R. Ramdani, Christine Leroux, Guillaume Monier, Christelle Varenne, Philip Hoggan, Dominique Castelluci, Catherine Bougerol, François Réveret, Joël Leymarie, Elodie Petit, Vladimir G. Dubrovskii, Evelyne Gil

Author Affiliations +

Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 89230O (2013) https://doi.org/10.1117/12.2035485
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia

Abstract

Hydride Vapor Phase Epitaxy (HVPE) makes use of chloride III-Cl and hydride V-H3 gaseous growth precursors. It is known as a near-equilibrium process, providing the widest range of growth rates from 1 to more than 100 μm/h. When it comes to metal catalyst-assisted VLS (vapor-liquid-solid) growth, the physics of HVPE growth is maintained: high dechlorination frequency, high axial growth rate of nanowires (NWs) up to 170 μm/h. The remarkable features of NWs grown by HVPE are the untapered morphology with constant diameter and the stacking fault-free crystalline phase. Record pure zinc blende cubic phase for 20 μm long GaAs NWs with radii of 10 and 5 nm is shown. The absence of wurtzite phase in GaAs NWs grown by HVPE whatever the diameter is discussed with respect to surface energetic grounds and kinetics. Ni assisted, Ni-Au assisted and catalyst-free HVPE growth of wurtzite GaN NWs is also addressed. Micro-photoluminescence spectroscopy analysis revealed GaN nanowires of great optical quality, with a FWHM of 1 meV at 10 K for the neutral donor bound exciton transition.

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Yamina André, Agnès Trassoudaine, Geoffrey Avit, Kaddour Lekhal, Mohammed R. Ramdani, Christine Leroux, Guillaume Monier, Christelle Varenne, Philip Hoggan, Dominique Castelluci, Catherine Bougerol, François Réveret, Joël Leymarie, Elodie Petit, Vladimir G. Dubrovskii, and Evelyne Gil "Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89230O (7 December 2013); https://doi.org/10.1117/12.2035485

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KEYWORDS

Gallium arsenide

Gallium nitride

Nanowires

Crystals

Gallium

Silicon

Liquids

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