7 December 2013 Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
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Abstract
Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump–terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity.
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Hannah J. Joyce, Callum J. Docherty, Chaw-Keong Yong, Jennifer Wong-Leung, Qiang Gao, Suriati Paiman, H. Hoe Tan, C. Jagadish, James Lloyd-Hughes, Laura M. Herz, Michael B. Johnston, "Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892321 (7 December 2013); doi: 10.1117/12.2049016; https://doi.org/10.1117/12.2049016
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