7 December 2013 THz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs
Author Affiliations +
A terahertz (THz or T-rays) photomixer consisting of a meander type antenna with integrated nanoelectrodes on a low temperature grown GaAs (LT-GaAs) is demonstrated. The antenna was designed for molecular fingerprinting and sensing applications within a spectral range of 0.3-0.4 THz. A combination of electron beam lithography (EBL) and focused ion beam (FIB) milling was used to fabricate the T-ray emitter. Antenna and nanoelectrodes were fabricated by standard EBL and lift-off steps. Then a 40-nm-wide gap in an active photomixer area separating the nanoelectrodes was milled by a FIB. The integrated nano-contacts with nano-gaps enhance the illuminated light and THz electric fields as well as contribute to a better collection of photo-generated electrons. T-ray emission power from the fabricated photomixer chips were few hundreds of nanowatts at around 0.15 THz and tens of nanowatts in the 0.3-0.4 THz range.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Seniutinas, G. Seniutinas, G. Gervinskas, G. Gervinskas, E. Constable, E. Constable, A. Krotkus, A. Krotkus, G. Molis, G. Molis, G. Valušis, G. Valušis, R. A. Lewis, R. A. Lewis, S. Juodkazis, S. Juodkazis, "THz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892322 (7 December 2013); doi: 10.1117/12.2033746; https://doi.org/10.1117/12.2033746

Back to Top