7 December 2013 A method for evaporating silicon to form low dimensional Si lattice structures
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Physical deposition by evaporation is a convenient and cost effective method for generating thin layers of material. In this work, we utilise an electron-beam evaporation system retrofitted with a rotating shutter to control and reduce the deposition rate of materials. Under normal conditions, the evaporator is able to achieve a typical deposition rate of 1 A/s. In order to reduce the deposition rate, a rotating shutter was designed and retrofitted to the evaporator. The rotating shutter consists of a metal plate with a slit opening of 6° and 36°. When rotated during evaporation, a reduction in deposition rate of 1/60 and 1/10 onto a sample is expected. We can control the deposition to achieve a rate of 1 A/min. By using this modified system, we deposited Si and SiO2 onto Si substrates. In situ deposition is monitored using a quartz thickness monitor. After evaporation, film thickness is measured using AFM and verified with spectroscopic ellipsometer measurement. Using this method, we are able to reach a deposited film thickness of 3 nm. This work is expected to contribute significantly towards the fabrication of low dimensional silicon devices.
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David C. Ng, David C. Ng, Kumar Ganesan, Kumar Ganesan, Alastair Stacey, Alastair Stacey, Efstratios Skafidas, Efstratios Skafidas, "A method for evaporating silicon to form low dimensional Si lattice structures", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89234I (7 December 2013); doi: 10.1117/12.2033660; https://doi.org/10.1117/12.2033660

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