20 December 2013 Investigation of amorphisation of germanium using modeling and experimental processes
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Abstract
Crystalline germanium substrates were amorphised to a depth of one micron by ion implantation of germanium ions at a series of relatively high energies and dose. Using the ion implantation modeling software TRIM, this paper compares the amorphisation results from the ion implantation simulations and experimental results from transmission electron microscopy (TEM) analysis of cross-sections of implanted samples. TEM cross-section micrographs show a clear boundary between amorphous and crystalline germanium. The effect of amorphisation of Ge on the subsequent formation of Nickel germanide is demonstrated and one significant issue is the increased depth of NiGe grains formed on a-Ge compared with c-Ge.
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S. Almalki, S. Almalki, F. Algahtani, F. Algahtani, M. Blackford, M. Blackford, M. S. Alnassar, M. S. Alnassar, B. C. Johnson, B. C. Johnson, J. C. McCallum, J. C. McCallum, A. S. Holland, A. S. Holland, } "Investigation of amorphisation of germanium using modeling and experimental processes", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89235H (20 December 2013); doi: 10.1117/12.2035093; https://doi.org/10.1117/12.2035093
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