High-Power Edge-And Surface-Emitting AlGaAs Semiconductor Lasers

G A Evans; J K Butler; D B Carlin; N W Carlson; J C Connolly; J M Hammer

doi:10.1117/12.944351

9 August 1988 High-Power Edge-And Surface-Emitting AlGaAs Semiconductor Lasers

G A Evans, J K Butler, D B Carlin, N W Carlson, J C Connolly, J M Hammer

Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944351
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Channeled-Substrate-Planar (CSP) AlGaAs/GaAs semiconductor lasers are important, established, commercial products and have been extensively studied both experimentally and theoretically.^1-12They have single spatial mode output powers as high as any single element semiconductor laser^4,5 and have demonstrated long life at very high power.⁶ They have been used as the elements in linear^13,14and Y-guide^15,16arrays . Originally grown by liquid phase epitaxy (LPE) on n-types and later p-type2 GaAs substrates, functionally equivalent structures are also grown by metalorganic chemical vapor deposition (MOCVD)^17,18and molecular beam epitaxy (MBE).^19,20In contrast to CSP lasers, Grating Surface Emitting (GSE) lasers are just now moving beyond the "laboratory curiosity" phase, having demonstrated the capability for high power and moderate efficiencies.²¹ GSE lasers offer the potential for very high power (> 1W) and high brightness when integrated into coherent one-dimensional²² and two-dimensional arrays.²³ Although an early GSE laser was based on a conventional CSP structure,²⁴ recent rapid improvements in GSE performance are a result of advances in 1) material growth technologies which provide quantum well capability and 2) processing technology. In this paper, we review the lateral guiding mechanism of CSP lasers and compare experimental and analytical results of CSP lasers with geometrical and compositional nonuniformities. Finally, we review the structures and performance of recent GSE lasers.

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G A Evans, J K Butler, D B Carlin, N W Carlson, J C Connolly, and J M Hammer "High-Power Edge-And Surface-Emitting AlGaAs Semiconductor Lasers", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944351

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KEYWORDS

Diffusion

Zinc

High power lasers

Near field

Diodes

Absorption

Semiconductor lasers

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