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9 August 1988 High Power Laser Diodes For The NASA Direct Detection Laser Transceiver Experiment
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Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944353
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
High power semiconductor laser diodes from the Matsushita Electronics Corporation have been selected by TRW for use in the NASA space laser communications experiments. Three 70 mW buried twin ridge substrate (BTRS) GaA lAs lasers, operating in a band of wavelengths near 870 nm, will be outfitted with an external cavity "third" mirror element and coaligned using narrow bandpass filters. Diode selection criteria, design features, and measured performance data will be discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard D Seery and Terry L. Holcomb "High Power Laser Diodes For The NASA Direct Detection Laser Transceiver Experiment", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944353
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