Paper
12 March 2014 Focused beam scatterometry for deep subwavelength metrology
Author Affiliations +
Abstract
It is known that far-field scattered light requires a priori sample information in order to reconstruct nm-scale information such as is required in semiconductor metrology. We describe an approach to scatterometry that uses unconventional polarization states in the pupil of a high NA objective lens. We call this focused beam scatterometry; we will discuss the sensitivity limits to this approach and how it relates to micro-ellipsometry as well as low-NA scatterometry.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas G. Brown, Miguel A. Alonso, Anthony Vella, Michael J. Theisen, Stephen T. Head, Steven R. Gillmer, and Jonathan D. Ellis "Focused beam scatterometry for deep subwavelength metrology", Proc. SPIE 8949, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XXI, 89490Y (12 March 2014); https://doi.org/10.1117/12.2045651
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CITATIONS
Cited by 7 scholarly publications.
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KEYWORDS
Scatterometry

Polarization

Dielectric polarization

Scattering

Light scattering

Metrology

Semiconductors

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