24 March 2014 Photoluminescence quantum yield of CdSe-ZnS/CdS/ZnS core-multishell quantum dots approaches 100% due to enhancement of charge carrier confinement
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Abstract
Quantum dots (QDs) with the highest possible photoluminescence quantum yields are necessary for modern nanotechnology applications to biosensing and optoelectronics. To date, core-shell QDs are the best. We suggest and demonstrate a novel approach to enhancement of charge-carrier confinement in the core of CdSe QDs by creating a ZnS/CdS/ZnS shell with staggered potential barrier. The CdS interlayer breaks the ZnS-shell structure continuity, which allows combining the benefits of a single ZnS-monolayer inner shell, creating the highest possible confinement potential, with a sufficient overall shell thickness and suitability for common surface modification techniques. This approach allows the preparation of CdSe-ZnS/CdS/ZnS QDs with photoluminescence quantum yields approaching 100% and small photoluminescence peak width.
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Pavel Samokhvalov, Pavel Linkov, Jean Michel, Michael Molinari, Igor Nabiev, "Photoluminescence quantum yield of CdSe-ZnS/CdS/ZnS core-multishell quantum dots approaches 100% due to enhancement of charge carrier confinement", Proc. SPIE 8955, Colloidal Nanoparticles for Biomedical Applications IX, 89550S (24 March 2014); doi: 10.1117/12.2040196; https://doi.org/10.1117/12.2040196
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