On phase noise of self-injection locked semiconductor lasers

E. Dale; W. Liang; D. Eliyahu; A. A. Savchenkov; V. S. Ilchenko; A. B. Matsko; D. Seidel; L. Maleki

doi:10.1117/12.2044824

4 March 2014 On phase noise of self-injection locked semiconductor lasers

E. Dale, W. Liang, D. Eliyahu, A. A. Savchenkov, V. S. Ilchenko, A. B. Matsko, D. Seidel, L. Maleki

Proceedings Volume 8960, Laser Resonators, Microresonators, and Beam Control XVI; 89600X (2014) https://doi.org/10.1117/12.2044824
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

We discuss our recent progress in iimproving the phase noise of a semiconductor laser using self-injection locking of to a mode of a high-Q whispering gallery mode resonator. Locking efficiency is analyzed for semiconductor distributed feedback (DFB) as well as Fabry-Perot (FP) lasers operating at 690 nm, 1060 nm, 1550 nm, and 2 μm. Instantaneous linewidth below 300 Hz is realized with telecom DFB lasers. Tunability of the lasers is demonstrated. Commercially available packaged ”plug-and-play” devices are manufactured.

Citation Download Citation

E. Dale, W. Liang, D. Eliyahu, A. A. Savchenkov, V. S. Ilchenko, A. B. Matsko, D. Seidel, and L. Maleki "On phase noise of self-injection locked semiconductor lasers", Proc. SPIE 8960, Laser Resonators, Microresonators, and Beam Control XVI, 89600X (4 March 2014); https://doi.org/10.1117/12.2044824

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