4 March 2014 On phase noise of self-injection locked semiconductor lasers
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Abstract
We discuss our recent progress in iimproving the phase noise of a semiconductor laser using self-injection locking of to a mode of a high-Q whispering gallery mode resonator. Locking efficiency is analyzed for semiconductor distributed feedback (DFB) as well as Fabry-Perot (FP) lasers operating at 690 nm, 1060 nm, 1550 nm, and 2 μm. Instantaneous linewidth below 300 Hz is realized with telecom DFB lasers. Tunability of the lasers is demonstrated. Commercially available packaged ”plug-and-play” devices are manufactured.
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E. Dale, E. Dale, W. Liang, W. Liang, D. Eliyahu, D. Eliyahu, A. A. Savchenkov, A. A. Savchenkov, V. S. Ilchenko, V. S. Ilchenko, A. B. Matsko, A. B. Matsko, D. Seidel, D. Seidel, L. Maleki, L. Maleki, } "On phase noise of self-injection locked semiconductor lasers", Proc. SPIE 8960, Laser Resonators, Microresonators, and Beam Control XVI, 89600X (4 March 2014); doi: 10.1117/12.2044824; https://doi.org/10.1117/12.2044824
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