4 March 2014 On phase noise of self-injection locked semiconductor lasers
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We discuss our recent progress in iimproving the phase noise of a semiconductor laser using self-injection locking of to a mode of a high-Q whispering gallery mode resonator. Locking efficiency is analyzed for semiconductor distributed feedback (DFB) as well as Fabry-Perot (FP) lasers operating at 690 nm, 1060 nm, 1550 nm, and 2 μm. Instantaneous linewidth below 300 Hz is realized with telecom DFB lasers. Tunability of the lasers is demonstrated. Commercially available packaged ”plug-and-play” devices are manufactured.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Dale, E. Dale, W. Liang, W. Liang, D. Eliyahu, D. Eliyahu, A. A. Savchenkov, A. A. Savchenkov, V. S. Ilchenko, V. S. Ilchenko, A. B. Matsko, A. B. Matsko, D. Seidel, D. Seidel, L. Maleki, L. Maleki, } "On phase noise of self-injection locked semiconductor lasers", Proc. SPIE 8960, Laser Resonators, Microresonators, and Beam Control XVI, 89600X (4 March 2014); doi: 10.1117/12.2044824; https://doi.org/10.1117/12.2044824

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